2SC5949 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Transistor Silicon NPN Triple Diffused Type

TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5949
2SC5949
Power Amplifier Applications
Unit: mm
• Complementary to 2SA2121
• Recommended for audio frequency amplifier output stage.
Absolute Maximum Ratings (Tc = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
200
V
200
V
5
V
15
A
1.5
A
220
W
150
°C
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
JEDEC
―
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEITA
―
reliability significantly even if the operating conditions (i.e.
TOSHIBA
2-21F1A
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Weight: 9.75 g (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
1
2006-11-16