2SC5949 Datasheet, PDF (2/4 Pages) Toshiba Semiconductor – Transistor Silicon NPN Triple Diffused Type

Electrical Characteristics (Tc = 25°C)
Characteristic
Symbol
Test Conditions
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
I_CBO
V_CB = 200 V, I_E = 0
I_EBO
V_EB = 5 V, I_C = 0
V _{(BR) CEO} I_C = 50 mA, I_B = 0
h_{FE (1)}
V_CE = 5 V, I_C = 1 A
(Note 1)
h_{FE (2)}
V_{CE (sat)}
V_BE
V_CE = 5 V, I_C = 8 A
I_C = 10 A, I_B = 1 A
V_CE = 5 V, I_C = 8 A
f_T
V_CE = 5 V, I_C = 1 A
C_ob
V_CB = 10 V, I_E = 0, f = 1 MHz
Note 1: h_FE(1) classification R: 55 to 110, O: 80 to 160
Marking
2SC5949
Min Typ. Max Unit
―
―
5.0
µA
―
―
5.0
µA
200 ―
―
V
55
― 160
35
60
―
―
0.4 3.0
V
―
1.0 1.5
V
―
30
― MHz
― 270 ―
pF
TOSHIBA
2SC5949
JAPAN
Characteristics
indicator
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-16