2SA1972_09 Datasheet, PDF (3/4 Pages) Toshiba Semiconductor – High-Voltage Switching Applications

2SA1972
−500
−100
−80
−400
−300
I_C – V_CE
−60 −40
−20 −10
−5
−2
−1
−100
0
0
IB = −0.5 mA
Common emitter
Ta = 25°C
−2 −4 −6 −8 −10 −12 −14 −16 −18 −20
Collector voltage V_CE (V)
−500
−400
I_C – V_BE
Common emitter
VCE = −5 V
−300
−200
−100
Ta = 100°C 25
−55
0
0
−0.2 −0.4 −0.6 −0.8
−1
−1.2
Collector-emitter voltage V_BE (V)
1000
500
300
100
50
30
h_FE – I_C
100
25
Ta = −55°C
10
Common emitter
5
VCE = −5 V
3
−1
−10
−100
Collector current I_C (mA)
−1000
V_{CE (sat)} – I_C
−30
Common emitter
−10 ^{IC/IB = 10}
−5
−3
−1
−0.5
−0.3
−0.1
−0.05
−0.03
−1
25
100
Ta = −55°C
−10
−100
−1000
Collector current I_C (mA)
V_{BE (sat)} – I_C
−10
Common emitter
−5 _{IC/IB = 10}
−3
−1
−55
−0.5
Ta = 100°C 25
−0.3
−0.1
−1
−10
−100
Collector current I_C (mA)
−500
Safe Operating Area
−3000
300 μs*
IC max (pulsed)*
−1000
IC max (continuous)
−300
100 ms*
100 μs*
10 μs*
−100
−30
DC operation
Ta = 25°C
10 ms*
1 ms*
−10
−3
−1
−1
*: Single nonrepetitive
pulse Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
−3
−10
−30
VCEO max
−100 −300
Collector-emitter voltage V_CE (V)
−1000
3
2009-12-21