2SA1972_09 Datasheet, PDF (2/4 Pages) Toshiba Semiconductor – High-Voltage Switching Applications

Electrical Characteristics (Ta = 25°C)
2SA1972
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
I_CBO
I_EBO
V _{(BR) CEO}
h_{FE (1)}
h_{FE (2)}
V_{CE (sat)}
V_{BE (sat)}
f_T
C_ob
V_CB = −400 V, I_E = 0
V_EB = −7 V, I_C = 0
I_C = −10 mA, I_B = 0
V_CE = −5 V, I_C = −20 mA
V_CE = −5 V, I_C = −100 mA
I_C = −100 mA, I_B = −10 mA
I_C = −100 mA, I_B = −10 mA
V_CE = −5 V, I_C = −50 mA
V_CB = −10 V, I_E = 0, f = 1 MHz
Min Typ. Max Unit
―
― −10
―
―
−1
−400 ―
―
140
―
450
140
―
400
― −0.4 −1.0
― −0.76 −0.9
―
35
―
―
18
―
μA
μA
V
V
V
MHz
pF
Turn-on time
Switching time Storage time
Fall time
t_on
Output
―
0.2
―
20 μs Part No. ^IB1
t_stg
I_B2
―
2.3
―
μs
V_CC = −200 V
t_f
I_B1 = 10 mA, I_B2 = 20 mA,
duty cycle ≤ 1%
―
0.2
―
Marking
A1972
Part No. (or abbreviation code)
Lot No.
Note2
Note2: A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
2
2009-12-21