2SA1972_09 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – High-Voltage Switching Applications

TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA1972
High-Voltage Switching Applications
2SA1972
Unit: mm
• High breakdown voltage: V_CEO = −400 V
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power dissipation
Junction temperature
Storage temperature range
V_CBO
V_CEO
V_EBO
I_C
I_CP
I_B
P_C
T_j
T_stg
−400
V
−400
V
−7
V
−0.5
A
−1
−0.25
A
900
mW
150
°C
−55 to 150
°C
JEDEC
TO-92MOD
Note1: Using continuously under heavy loads (e.g. the application of high
JEITA
―
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
TOSHIBA
2-5J1A
Weight: 0.36 g (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2009-12-21