2SA1941-O Datasheet, PDF (3/4 Pages) Toshiba Semiconductor – Power Amplifier Applications4

−10
−8
−6
−4
−2
0
0
I_C – V_CE
−250
−200
−150
Common emitter
Tc = 25°C
−100
−50
−40
−30
−20
IB = −10 mA
−2
−4
−6
−8
−10
Collector-emitter voltage V_CE (V)
2SA1941
I_C – V_BE
−10
−8
−6
Tc = 100°C
−4
25°C
−25°C
−2
Common emitter
VCE = −5 V
0
0
−0.4
−0.8
−1.2
−1.6
−2.0
Base-emitter voltage V_BE (V)
V_{CE (sat)} – I_C
−10
−1
−0.1
−0.01
−0.01
Tc = 100°C
Tc = −25°C
Tc = 25°C
−0.1
−1
Common emitter
IC/IB = 10
−10
−100
Collector current I_C (A)
Safe Operating Area
−50
−30
IC max (pulsed)*
−10 ^{IC max (continuous)}
1 ms*
10 ms*
−5
−3
DC operation
Tc = 25°C
−1
100 ms*
−0.5
*: Single nonrepetitive
−0.3
pulse Tc = 25°C
Curves must be derated
−0.1 linearly with increase in
temperature.
−0.05
−2 −3
−10 −30
VCEO max
−100 −300 −1000
Collector-emitter voltage V_CE (V)
h_FE – I_C
1000
Tc = 100°C
Tc = 25°C
100
Tc = −25°C
10
1
−0.01
Common emitter
VCE = −5 V
−0.1
−1
−10
Collector current I_C (A)
3
2010-11-02