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2SA1941-O Datasheet, PDF (2/4 Pages) Toshiba Semiconductor – Power Amplifier Applications4
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
ICBO
VCB = −140 V, IE = 0
IEBO
VEB = −5 V, IC = 0
V (BR) CEO IC = −50 mA, IB = 0
hFE (1)
VCE = −5 V, IC = −1 A
(Note)
hFE (2)
VCE (sat)
VBE
fT
Cob
VCE = −5 V, IC = −5 A
IC = −7 A, IB = −0.7 A
VCE = −5 V, IC = −5 A
VCE = −5 V, IC = −1 A
VCB = −10 V, IE = 0, f = 1 MHz
Note: hFE (1) classification R: 55 to 110, O: 80 to 160
Marking
2SA1941
Min Typ. Max Unit
―
― −5.0 μA
―
― −5.0 μA
−140 ―
―
V
55
―
160
35
83
―
― −0.8 −2.0
V
― −1.0 −1.5
V
―
30
― MHz
― 320 ―
pF
TOSHIBA
A1941
Characteristics
indicator
Part No. (or abbreviation code)
Lot No.
NOTE 2
Note 2 : A line under a Lot No. identifies the indication of product Labels.
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the
restriction of the use of certain hazardous substances in electrical and electronic equipment.
2
2010-11-02