2SA1941-O Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Power Amplifier Applications4

TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA1941
Power Amplifier Applications
2SA1941
Unit: mm
• High breakdown voltage: V_CEO = −140 V (min)
• Complementary to 2SC5198
• Recommended for 70-W high-fidelity audio frequency amplifier
output stage.
Absolute Maximum Ratings (T_a = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
−140
V
Collector-emitter voltage
V_CEO
−140
V
Emitter-base voltage
V_EBO
−5
V
Collector current
I_C
−10
A
Base current
I_B
−1
A
Collector power dissipation
(T_c = 25°C)
Junction temperature
Storage temperature range
P_C
100
W
T_j
150
°C
T_stg
−55 to 150
°C
JEDEC
JEITA
TOSHIBA
―
―
2-16C1A
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 4.7 g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2010-11-02