2SA1930 Datasheet, PDF (3/5 Pages) Toshiba Semiconductor – TRANSISTOR (POWER, DRIVER STAGE AMPLIFIER APPLICATIONS)

−2.0
−1.6
−1.2
−0.8
−0.4
0
0
I_C – V_CE
−300 −200
−100
−50
−40
−30
−20
−10
−8
−6
−4
IB = −2 mA
Common emitter
Tc = 25°C
−2
−4
−6
−8
−10
Collector-emitter voltage V_CE (V)
2SA1930
I_C – V_BE
−2.0
−1.6
Common emitter
VCE = −5 V
−1.2
−0.8
Tc = 100°C
−0.4
25
−25
0
0
−0.4
−0.8
−1.2
−1.6
−2.0
Base-emitter voltage V_BE (V)
V_{CE (sat)} – I_C
−10
Common emitter
IC/IB = 10
−1
Tc = 100°C
−0.1
Tc = 25°C
Tc = −25°C
−0.01
−0.01
−0.1
−1
−10
Collector current I_C (A)
1000
100
Tc = 100°C
Tc = 25°C
Tc = −25°C
h_FE – I_C
Common emitter
VCE = −5 V
10
−0.01
−0.1
−1
−10
Collector current I_C (A)
Safe Operating Area
−5 IC max (pulsed)*
−3
1 ms*
IC max
−1 ^(continuous)
100 μs*
−0.5
−0.3
DC operation
Tc = 25°C
10 ms*
100 ms*
−0.1
−0.05
−0.03 *: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated
linearly with increase in
−0.01 _temperature.
−3
−10
−30
−100
VCEO max
−300 −1000
Collector-emitter voltage V_CE (V)
3
2007-06-15