2SA1930 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – TRANSISTOR (POWER, DRIVER STAGE AMPLIFIER APPLICATIONS)

TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA1930
Power Amplifier Applications
Driver Stage Amplifier Applications
2SA1930
Unit: mm
• High transition frequency: f_T = 200 MHz (typ.)
• Complementary to 2SC5171
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
−180
V
−180
V
−5
V
−2
A
−1
A
2.0
W
20
150
°C
−55 to 150
°C
JEDEC
JEITA
TOSHIBA
―
SC-67
2-10R1A
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
Weight: 1.7 g (typ.)
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2007-06-15