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2SA1930 Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – TRANSISTOR (POWER, DRIVER STAGE AMPLIFIER APPLICATIONS)
Electrical Characteristics (Tc = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
VCE (sat)
VBE
fT
Cob
VCB = −180 V, IE = 0
VEB = −5 V, IC = 0
IC = −10 mA, IB = 0
VCE = −5 V, IC = −0.1 A
VCE = −5 V, IC = −1 A
IC = −1 A, IB = −0.1 A
VCE = −5 V, IC = −1 A
VCE = −10 V, IC = −0.3 A
VCB = −10 V, IC = 0, f = 1 MHz
Marking
2SA1930
Min Typ. Max Unit
―
― −5.0 μA
―
― −5.0 μA
−180 ―
―
V
100
―
320
50
―
―
― −0.24 −1.0
V
― −0.68 −1.5
V
― 200 ― MHz
―
26
―
pF
A1930
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2007-06-15