2SA1425_10 Datasheet, PDF (3/4 Pages) Toshiba Semiconductor – Power Amplifier Applications Driver-Stage Amplifier Applications

−1000
−800
−600
−400
−200
0
0
I_C – V_CE
−15 −10
Common emitter
Ta = 25°C
−7
−5
−4
−3
−2
IB = −1 mA
0
−2
−4
−6
−8
−10 −12
Collector-emitter voltage V_CE (V)
2SA1425
1000
500
300
100
50
20
−3
h_FE – I_C
Ta = 100°C
25
−25
Common emitter
VCE = −5 V
−10
−30
−100
−300
Collector current I_C (mA)
−1000
V_{CE (sat)} – I_C
−3
Common emitter
IC/IB = 10
−1
−0.5
−0.3
Ta = 100°C
−0.1
−0.05
−0.03
−3
25
−25
−10
−30
−100
−300
Collector current I_C (mA)
−1000
−1000
−800
I_C – V_BE
Common emitter
VCE = −5 V
−600
−400
Ta = 100°C 25
−25
−200
0
0
−0.2 −0.4 −0.6 −0.8 −1.0 −1.2
Base-emitter voltage V_BE (V)
P_C – Ta
1.2
1.0
0.8
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
Safe Operating Area
-5
-3
IC max (pulsed)*
−1 IC max (continuous)
−0.5
−0.3
−0.1
−0.05
−0.03
DC operation
Ta = 25°C
100 ms*
1 ms*
10 ms*
*: Single nonrepetitive pulse
−0.01
Ta = 25°C
−0.005 _{Curves must be derated linearly}
with in crease in temperature.
−0.002
−0.1 −0.3 −1 −3 −10
VCEO max
−30 −100
−300
Collector-emitter voltage V_CE (V)
3
2010-03-10