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2SA1425_10 Datasheet, PDF (2/4 Pages) Toshiba Semiconductor – Power Amplifier Applications Driver-Stage Amplifier Applications | |||
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Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
ICBO
VCB = â120 V, IE = 0
IEBO
VEB = â5 V, IC = 0
V (BR) CEO IC = â10 mA, IB = 0
V (BR) EBO IE = â1 mA, IC = 0
hFE
VCE = â5 V, IC = â100 mA
(Note 2)
VCE (sat)
VBE
fT
IC = â500 mA, IB = â50 mA
VCE = â5 V, IC = â500 mA
VCE = â5 V, IC = â100 mA
Cob
VCB = â10 V, IE = 0, f = 1 MHz
Note 2: hFE classification O: 80 to 160, Y: 120 to 240
Marking
2SA1425
Min Typ. Max Unit
â
â â100 nA
â
â â100 nA
â120 â
â
V
â5
â
â
V
80
â
240
â
â
â1.0
V
â
â
â1.0
V
â 120 â MHz
â
â
40
pF
A1425
Characteristics
indicator
Part No. (or abbreviation code)
Lot No.
Note 3
Note 3: A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
2
2010-03-10
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