2SA1425_10 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Power Amplifier Applications Driver-Stage Amplifier Applications

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1425
Power Amplifier Applications
Driver-Stage Amplifier Applications
2SA1425
Unit: mm
• Complementary to 2SC3665.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
−120
V
Collector-emitter voltage
V_CEO
−120
V
Emitter-base voltage
V_EBO
−5
V
Collector current
I_C
−800
mA
Base current
I_B
−80
mA
Collector power dissipation
P_C
1000
mW
Junction temperature
Storage temperature range
T_j
150
°C
T_stg
−55 to 150
°C
JEDEC
―
Note1: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEITA
TOSHIBA
―
2-7D101A
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 0.2 g (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2010-03-10