TLP3312 Datasheet, PDF (2/8 Pages) Toshiba Semiconductor – Battery Control Measuring Instruments Logic IC Testers / Memory Testers

TLP3312
Absolute Maximum Ratings (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Forward Current
Forward Current Derating (Ta ≥ 25°C)
Reverse Voltage
Junction Temperature
Off-State Output Terminal Voltage
On-State Current
On-State Current Derating (Ta ≥ 25°C)
Junction Temperature
Storage Temperature Range
Operating Temperature Range
Lead Soldering Temperature (10 s)
Isolation Voltage (AC, 1 minute, R.H. ≤ 60%) (Note 1)
I_F
ΔI_F/°C
V_R
T_j
V_OFF
I_ON
ΔI_ON/°C
T_j
T_stg
T_opr
T_sol
BV_S
50
−0.5
5
125
60
400
−4.0
125
−40 to 125
−40 to 85
260
500
mA
mA/°C
V
°C
V
mA
mA/°C
°C
°C
°C
°C
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note1: Device considered a two-terminal device: Pins 1 and 2 shorted together, and pins 3 and 4 shorted together.
Caution
This device is sensitive to electrostatic discharge. When using this device, please ensure that all tools and equipment
are earthed.
Recommended Operating Conditions
CHARACTERISTIC
SYMBOL MIN TYP. MAX UNIT
Supply Voltage
V_DD
⎯
⎯
48
V
Forward Current
I_F
⎯
⎯
20
mA
On-State Current
I_ON
⎯
⎯
400 mA
Operating Temperature
T_opr
−20
⎯
65
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
devices. Each item also has its own independent guideline document. In developing designs using these
products, please confirm the specified characteristics shown in these documents.
Individual Electrical Characteristics (Ta = 25°C)
CHARACTERISTIC
Forward Voltage
Reverse Current
Capacitance
Off-State Current
SYMBOL
TEST CONDITION
V_F
I_F = 10 mA
I_R
V_R = 5 V
C_T
V = 0V, f = 1 MHz
I_OFF
V_OFF = 60 V
MIN
TYP.
MAX UNIT
1.0
1.15
1.3
V
⎯
⎯
10
μA
⎯
15
⎯
pF
⎯
⎯
1
nA
Capacitance
C_OFF
V = 0V, f = 1 MHz, t < 1 s
⎯
20
⎯
pF
2
2014-09-01