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| TC59LM836DKB-30 Datasheet, PDF (14/65 Pages) Toshiba Semiconductor – MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 288Mbits Network FCRAM2 | |||
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Read Timing (Burst Length = 4)
Unidirectional DS/QS mode
CLK
tCH tCL
tCK
CLK
Input
(control &
addresses)
tIS tIH LAL (after RDA)
DS
(Input)
CAS latency = 4
LQS
(output)
Low
LDQ
Hi-Z
(output)
UQS
(output)
Low
UDQ
Hi-Z
(output)
CAS latency = 5
LQS
(output)
Low
LDQ
Hi-Z
(output)
UQS
(output)
Low
UDQ
Hi-Z
(output)
TC59LM836DKB-30,-33,-40
DESL
tCKQS
tCKQS
tCKQS tQSP tQSP
tQSQA
tLZ
tQSQ
tQSQA
tQSQV
tQSQ
tQSQ
tQSQV
tHZ
Q0
tAC
tQSQA
tCKQS
Q1 Q2 Q3
tAC tAC
tQSQA
tQSP tQSP
tOH
tCKQS
Low
tQSQA
tQSQA tQSQV
tQSQ
tHZ
Low
Q0 Q1 Q2 Q3
tLZ
tAC
tAC
tAC
tOH
tCKQS
tCKQS
tCKQS tQSP tQSP
tQSQA
tLZ
tQSQ
tQSQA
tQSQV
tQSQ
tQSQ
tQSQV
tHZ
Low
Q0
tAC
tQSQA
tCKQS
Q1 Q2 Q3
tAC tAC
tQSQA
tQSP tQSP
tOH
tCKQS
tQSQA
tQSQA tQSQV
tQSQ
tHZ
Low
Q0 Q1 Q2 Q3
tLZ
tAC
tAC
tAC
tOH
Rev 1.3
2005-03-07 14/65
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