XP161A01A8PR Datasheet, PDF (4/4 Pages) Torex Semiconductor – N-Channel Power MOS FET

91""13
CAPACITANCE vs. DRAIN-SOURCE VOLTAGE

Vgs=0V, f=1MHz
$JTT

$PTT
$STT
SWITCHING TIME vs. DRAIN CURRENT

Vgs=5V, Vdd˺10V, PW=10µsec. duty≤1%
UG

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Drain-Source Voltage:Vds (V)




Drain Current:Id (A)
GATE-SOURCE VOLTAGE vs. GATE CHARGE
Vds=10V, Id=3A











Gate Charge:Qg (nc)
REVERSE DRAIN CURRENT
vs. SOURCE-DRAIN VOLTAGE
Pulse Test


7HTʹ7

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Source-Drain Voltage:Vsd (V)
STANDARDIZED TRANSITION THERMAL RESISTANCE vs. PULSE WIDTH
Rth (ch-a)=62.5˚C/W, (Implemented on a ceramic PCB)

11

Single Pulse









Pulse Width:PW (sec)


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