XP161A01A8PR Datasheet, PDF (2/4 Pages) Torex Semiconductor – N-Channel Power MOS FET

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DC Characteristics
PARAMETER
Drain Cut-off Current
Gate-Source Leakage Current
Gate-Source Cut-off Voltage
Drain-Source On-state
Resistance (note)
Forward Transfer Admittance
(note)
Body Drain Diode
Forward Voltage
Note: Effective during pulse test.
SYMBOL
Idss
Igss
Vgs(off)
Rds(on)
Yfs
Vf
CONDITIONS
Vds=30V, Vgs=0V
Vgs=±20V, Vds=0V
Id=1mA, Vds=10V
Id=1.5A, Vgs=10V
Id=1.5A, Vgs=4.5V
Id=1.5A, Vds=10V
If=3A, Vgs=0V
Ta=25:
MIN
TYP
MAX
UNITS
10
µA
±10
µA
1.0
V
0.08
0.11
Ω
0.14
0.18
Ω
3.5
S
0.85
1.1
V
Dynamic Characteristics
PARAMETER
Input Capacitance
Output Capacitance
Feedback Capacitance
SYMBOL
Ciss
Coss
Crss
CONDITIONS
Vds=10V, Vgs=0V
f=1MHz
Ta=25:
MIN
TYP
MAX
UNITS
220
pF
140
pF
55
pF
Switching Characteristics
PARAMETER
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
SYMBOL
td (on)
tr
td (off)
tf
CONDITIONS
Vgs=5V, Id=1.5A
Vdd=10V
Ta=25:
MIN
TYP
MAX
UNITS
15
ns
15
ns
25
ns
15
ns
Thermal Characteristics
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
11
Thermal Resistance
(channel-ambience)
Rth (ch-a) Implement on a ceramic PCB
62.5
˚C/W
851