XP161A01A8PR Datasheet, PDF (1/4 Pages) Torex Semiconductor – N-Channel Power MOS FET

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NN-Channel Power MOS FET
NDMOS Structure
NLow On-State Resistance: 0.18Ω (max)
NUltra High-Speed Switching
NSOT-89 Package
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GNotebook PCs
GCellular and portable phones
GOn-board power supplies
GLi-ion battery systems
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The XP161A01A8PR is an N-Channel Power MOS FET with low on-state
resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set
thereby saving energy.
The small SOT-89 package makes high density mounting possible.
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Low on-state resistance : Rds(on)=0.11Ω(Vgs=10V)
: Rds(on)=0.18Ω(Vgs=4.5V)
Ultra high-speed switching
Operational Voltage : 4.5V
High density mounting : SOT-89
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N-Channel MOS FET
(1 device built-in)
850
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PIN
NUMBER
1
2
3
PIN
NAME
G
D
S
FUNCTION
Gate
Drain
Source
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Ta=25˚C
PARAMETER
SYMBOL RATINGS UNITS
Drain-Source Voltage
Gate-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Vdss
Vgss
Id
Idp
Idr
30
V
±20
V
3
A
9
A
3
A
Continuous Channel
Power Dissipation (note)
Pd
2
W
Channel Temperature
Tch
Storage Temperature
Tstg
Note: When implemented on a ceramic PCB
150
˚C
-55~150 ˚C