XP151A11B0MR Datasheet, PDF (4/4 Pages) Torex Semiconductor – POWER MOS FET

91"#.3
CAPACITANCE vs. DRAIN-SOURCE VOLTAGE

7HT7
G.)[
5Bˆ
SWITCHING TIME vs. DRAIN CURRENT

7HT7
7EE˺7
18ЖT
EVUZ≤
5Bˆ
$JTT

$PTT
$STT

UG

UE PGG
US

UE PO








%SBJO4PVSDF
7PMUBHF7ET

7






%SBJO
$VSSFOU*E

"
GATE-SOURCE VOLTAGE vs. GATE CHARGE
7ET7
*E"
5Bˆ













(BUF
$IBSHF2H

OD
REVERSE DRAIN CURRENT
vs. SOURCE-DRAIN VOLTAGE
5Bˆ
1VMTF
5FTU



7



7HT7
7









4PVSDF%SBJO
7PMUBHF7TE

7
STANDARDIZED TRANSITION THERMAL RESISTANCE vs. PULSE WIDTH
3UI DIB ˆ8

*NQMFNFOUFE
PO
B
DFSBNJD
1$#


4JOHMF
1VMTF








1VMTF
8JEUI18

T


11
805