XP151A11B0MR Datasheet, PDF (2/4 Pages) Torex Semiconductor – POWER MOS FET

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DC Characteristics
PARAMETER
Drain Cut-off Current
Gate-Source Leakage Current
Gate-Source Cut-off Voltage
Drain-Source On-state Resistance
( note )
Forward Transfer Admittance
( note )
Body Drain Diode
Forward Voltage
SYMBOL
Idss
Igss
Vgs (off )
Rds ( on )
| Yfs |
Vf
CONDITIONS
Ta=25° C
MIN
TYP MAX
UNITS
Vds = 30V , Vgs = 0V
Vgs = ± 20V , Vds = 0V
Id = 1mA , Vds = 10V
1.0
10
µA
± 10
µA
3.0
V
Id = 0.5A , Vgs = 10V
Id = 0.5A , Vgs = 4.5V
0.09 0.12
Ω
0.13 0.17
Ω
Id = 0.5A , Vds = 10V
2.4
S
If = 1A , Vgs = 0V
0.8
1.1
V
( note ) : Effective during pulse test.
Dynamic Characteristics
PARAMETER
Input Capacitance
Output Capacitance
Feedback Capacitance
SYMBOL
Ciss
Coss
Crss
CONDITIONS
Vds = 10V , Vgs = 0V
f = 1 MHz
Ta=25° C
MIN
TYP MAX
UNITS
150
pF
90
pF
30
pF
Switching Characteristics
PARAMETER
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
SYMBOL
td ( on )
tr
td ( off )
tf
CONDITIONS
Vgs = 5V , Id = 0.5A
Vdd = 10V
Ta=25° C
MIN
TYP MAX
UNITS
10
ns
15
ns
25
ns
45
ns
11
Thermal Characteristics
PARAMETER
Thermal Resistance
( channel-ambience )
SYMBOL
Rth ( ch-a )
CONDITIONS
Implement on a ceramic
PCB
MIN
TYP MAX
UNITS
250
°C / W
803