XP151A11B0MR Datasheet, PDF (1/4 Pages) Torex Semiconductor – POWER MOS FET

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NN-Channel Power MOS FET
NDMOS Structure
NLow On-State Resistance : 0.17Ω (max)
NUltra High-Speed Switching
NGate Protect Diode Built-in
NSOT-23 Package
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The XP151A11B0MR is an N-Channel Power MOS FET with low on-
state resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set
thereby saving energy.
In order to counter static, a gate protect diode is built-in.
The small SOT-23 package makes high density mounting possible.
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GNotebook PCs
GCellular and portable phones
GOn-board power supplies
GLi-ion battery systems
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Low on-state resistance : Rds (on) = 0.12Ω ( Vgs = 10V )
: Rds (on) = 0.17Ω ( Vgs = 4.5V )
Ultra high-speed switching
Gate Protect Diode Built-in
Operational Voltage : 4.5V
High density mounting : SOT-23
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PARAMETER
Drain - Source Voltage
Gate - Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Continuous Channel
Power Dissipation (note)
Channel Temperature
Storage Temperature
SYMBOL
Vdss
Vgss
Id
Idp
Idr
Pd
Tch
Tstg
RATINGS
30
+ 20
1
4
1
0.5
150
-55 ~ 150
Ta=25^OC
UNITS
V
V
A
A
A
W
O_C
O_C
( note ) : When implemented on a ceramic PCB
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