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| XP134A01A9SR Datasheet, PDF (4/4 Pages) Torex Semiconductor – Power MOS FET | |||
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91""43
1PXFS.04'&5
Ë &MFDUSJDBM$IBSBDUFSJTUJDT
Drain/Source Voltage vs. Capacitance
Vgs=0V, f=1MHz
Switching Time vs. Drain Current
Vgs=-5V, Vdd˺-10V, PW=10µsec. dutyʽ1%
$JTT
$PTT
$STT
Drain/Source Voltage:Vds (V)
UG
UEÊ¢PGGÊ£
US
UEÊ¢POÊ£
Drain Current:Id (A)
Gate/Source Voltage vs. Gate Charge
Vds=-10V, Id=-3.5A
Reverse Drain Current vs. Source/Drain Voltage
Pulse Test
u
7HTʹ7
7
Gate Charge:Qg (nc)
Source/Drain Voltage:Vsd (V)
Standardized Transition Thermal Resistance vs. Pulse Width
Rth (ch-a)=62.5ËC/W, (Implemented on a glass epoxy PCB)
4JOHMFQVMTF
Pulse Width:PW (sec)
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