XP134A01A9SR Datasheet, PDF (1/4 Pages) Torex Semiconductor – Power MOS FET

91""43
1PXFS
.04
'&5
x P-Channel Power MOS FET
x DMOS Structure
x Low On-State Resistance: 0.19Ω MAX
x Ultra High-Speed Switching
x SOP-8 Package
x Two FET Devices built-in
s Applications
q Notebook PCs
q Cellular and portable phones
q On-board power supplies
q Li-ion battery systems
s General Description
The XP134A01A9SR is a P-Channel Power MOS FET with low on-state
resistance and ultra high-speed switching characteristics.
Two FET devices are built into the one package.
Because high-speed switching is possible, the IC can be efficiently set
thereby saving energy.
The small SOP-8 package makes high density mounting possible.
s Features
Low on-state resistance: Rds(on)=0.12Ω(Vgs=-10V)
Rds(on)=0.19Ω(Vgs=-4.5V)
Ultra high-speed switching
Operational Voltage: -4.5V
High density mounting: SOP-8
s Pin Configuration
S1 1
G1 2
S2 3
G2 4
SOP-8
(TOP VIEW)
8 D1
7 D1
6 D2
5 D2
s Equivalent Circuit
1
8
2
7
3
6
4
5
P-Channel MOS FET
(2 devices built-in)
u
s Pin Assignment
PIN
NUMBER
PIN
NAME
FUNCTION
1
S1
Source
2
G1
Gate
3
S2
4
G2
Source
Gate
5~6
D2
Drain
7~8
D1
Drain
s Absolute Maximum Ratings
Ta=25˚C
PARAMETER
SYMBOL RATINGS UNITS
Drain-Source Voltage
Gate-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Vdss
Vgss
Id
Idp
Idr
-30
V
±20
V
-3.5
A
-10
A
-3.5
A
Continuous Channel
Power Dissipation (note)
Pd
2
W
Channel Temperature
Tch
150
˚C
Storage Temperature
Tstg
-55~150 ˚C
Note: When implemented on a glass epoxy PCB