XP134A01A9SR Datasheet, PDF (2/4 Pages) Torex Semiconductor – Power MOS FET

91""43
1PXFS
.04
'&5
s Electrical Characteristics
DC characteristics
PARAMETER
Drain Cut-off Current
Gate-Source Leakage Current
Gate-Source Cut-off Voltage
Drain-Source On-state
Resistance (note)
Forward Transfer Admittance
(note)
Body Drain Diode
Forward Voltage
Note: Effective during pulse test.
SYMBOL
Idss
Igss
Vgs(off)
Rds(on)
Yfs
Vf
CONDITIONS
Vds=-30V, Vgs=0V
Vgs=±20V, Vds=0V
Id=-1mA, Vds=-10V
Id=-2A, Vgs=-10V
Id=-2A, Vgs=-4.5V
Id=-2A, Vds=-10V
If=-3.5A, Vgs=0V
Ta=25:
MIN
TYP
MAX
UNITS
-10
µA
±1
µA
-1.0
-2.5
V
0.095
0.12
Ω
0.15
0.19
Ω
4
S
-0.85
-1.1
V
Dynamic characteristics
PARAMETER
Input Capacitance
Output Capacitance
Feedback Capacitance
SYMBOL
Ciss
Coss
Crss
u
Switching characteristics
PARAMETER
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
SYMBOL
td (on)
tr
td (off)
tf
CONDITIONS
Vds=-10V, Vgs=0V
f=1MHz
CONDITIONS
Vgs=-5V, Id=-2A
Vdd=-10V
Ta=25:
MIN
TYP
MAX
UNITS
600
pF
350
pF
110
pF
Ta=25:
MIN
TYP
MAX
UNITS
15
ns
25
ns
25
ns
15
ns
Thermal characteristics
PARAMETER
Thermal Resistance
(channel-surroundings)
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Rth (ch-a)
Implement on a glass epoxy
resin PCB
62.5
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