ONET8551T Datasheet, PDF (9/16 Pages) Texas Instruments – 11.3-Gbps Limiting Transimpedance Amplifier With RSSI

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CHIP DIMENSIONS AND PAD LOCATIONS
8551T
20 19 18 17
1
16
2
15
3
14
4
13
5
12
6 7 8 9 10 11
ONET8551T
SLLSEI5 – OCTOBER 2013
870 m
x
Figure 5. Die Thickness: 203 ±13 μm, Pad Dimensions: 105 μm x 65 μm, and Die Size: 870 ±40 μm x 1036
±40 μm
PAD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
COORDINATES (Referenced to Pad 1)
x (μm)
y (μm)
SYMBOL
0
0
GND
0
–115
OUT+
0
–230
GND
0
–460
VCC_OUT
0
–575
VCC_IN
116
–728
GND
226
–728
FILTER1
336
–728
IN
446
–728
FILTER2
556
–728
GND
666
–728
NC
671
–575
RSSI_IB
671
–460
RSSI_EB
671
–230
GND
671
–115
OUT–
671
0
GND
508
109
BW1
393
109
GND
278
109
GND
163
109
BW0
TYPE
Supply
Analog output
Supply
Supply
Supply
Supply
Analog output
Analog input
Analog output
Supply
No connect
Analog output
Analog output
Supply
Analog output
Supply
Digital input
Supply
Supply
Digital input
DESCRIPTION
Circuit ground
Non-inverted data output
Circuit ground
3.3-V supply voltage
3.3-V supply voltage
Circuit ground
Bias voltage for photodiode
Data input to TIA
Bias voltage for photodiode
Circuit ground
Do not connect
RSSI output signal for internally biased receivers
RSSI output signal for externally biased receivers
Circuit ground
Inverted data output
Circuit ground
Bandwidth adjustment
Circuit ground
Circuit ground
Bandwidth adjustment
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