ONET8551T Datasheet, PDF (8/16 Pages) Texas Instruments – 11.3-Gbps Limiting Transimpedance Amplifier With RSSI

ONET8551T
SLLSEI5 – OCTOBER 2013
VCC_OUT
VCC_IN
V_BIAS
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0.1F ^OUT+
0.1F _OUT-
GND
RRSSI
Figure 4. Basic Application Circuit for APD Receivers
RSSI
DEVICE INFORMATION
ASSEMBLY RECOMMENDATIONS
Careful attention to assembly parasitics and external components is necessary to achieve optimal performance.
Recommendations that optimize performance include:
• Minimize the total capacitance on the IN pad by using a low capacitance photodiode and paying attention to
stray capacitances. Place the photodiode close to the ONET8551T die in order to minimize the bond wire
length, and thus the parasitic inductance.
• Use identical termination and symmetrical transmission lines at the AC coupled differential output pins, OUT+
and OUT–.
• Use short bond wire connections for the supply terminals VCC_IN, VCC_OUT, and GND. Supply voltage
filtering is provided on chip, but filtering may be improved by using an additional external capacitor.
• The die has back-side metal. Conductive epoxy must be used to attach the die to ground.
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