BQ24295 Datasheet, PDF (9/45 Pages) Texas Instruments – I2C Controlled 3A Single Cell USB Charger

bq24295
www.ti.com
SLUSBC1 – SEPTEMBER 2013
ELECTRICAL CHARACTERISTICS (continued)
V_{VBUS_UVLOZ} < V_VBUS < V_ACOV and V_VBUS > V_BAT + V_SLEEP, T_J = –40°C to 125°C and T_J = 25°C for typical values unless other
noted.
PARAMETER
POWER PATH MANAGEMENT
V_{SYS_RANGE}
V_{SYS_MIN}
R_ON(RBFET)
R_ON(HSFET)
Typical system regulation voltage
System voltage output
Top reverse blocking MOSFET on-
resistance between VBUS and PMIID
Internal top switching MOSFET on-
resistance between PMID and SW
R_ON(LSFET)
Internal bottom switching MOSFET on-
resistance between SW and PGND
V_FWD
BATFET forward voltage in supplement
mode
V_{SYS_BAT}
SYS/BAT Comparator
V_BATGD
Battery good comparator rising threshold
V_{BATGD_HYST}
Battery good comparator falling threshold
BATTERY CHARGER
V_{BAT_REG_ACC}
Charge voltage regulation accuracy
I_{ICHG_REG_ACC}
Fast charge current regulation accuracy
I_{CHG_20pct}
V_BATLOWV
V_{BATLOWV_HYST}
I_{PRECHG_ACC}
I_{TYP_TERM_ACC}
I_{TERM_ACC}
V_SHORT
V_{SHORT_HYST}
I_SHORT
V_RECHG
t_RECHG
Charge current with 20% option on
Battery LOWV falling threshold
Battery LOWV rising threshold
Precharge current regulation accuracy
Typical Termination current
Termination current accuracy
Battery Short Voltage
Battery Short Voltage hysteresis
Battery short current
Recharge threshold below VBAT_REG
Recharge deglitch time
R_{ON_BATFET}
SYS-BAT MOSFET on-resistance
INPUT VOLTAGE/CURRENT REGULATION
V_{INDPM_REG_ACC}
Input voltage regulation accuracy
I_{USB_DPM}
USB Input current regulation limit, VBUS =
5V, current pulled from SW
I_{ADPT_DPM}
Input current regulation accuracy
I_{IN_START}
Input current limit during system start up
K_ILIM
I_IN = K_ILIM/R_ILIM
D+/D- DETECTION
V_{D+_SRC}
I_{D+_SRC}
I_{D–_SINK}
D+ voltage source
D+ connection check current source
D– current sink
I_{D_LKG}
Leakage current into D+/D–
V_{D+_LOW}
D+ Low comparator threshold
TEST CONDITIONS
Isys = 0A, BATFET (Q4) off, V_BAT up to 4.2 V,
REG01[3:1]=101, V_SYSMIN = 3.5 V
REG01[3:1]=101, V_SYSMIN = 3.5 V
T_J = –40°C – 85°C
T_J = -40°C – 125°C
T_J = –40°C – 85°C
T_J = -40°C – 125°C
BAT discharge current 10mA
V_SYS falling
V_BAT rising
V_BAT falling
V_BAT = 4.112V and 4.208V
V_BAT = 3.8V, I_CHG = 1024mA, T_J = 25°C
V_BAT = 3.8V, I_CHG = 1024mA, T_J = -20°C – 125°C
V_BAT = 3.8V, I_CHG = 2112mA, T_J = -20°C – 125°C
V_BAT = 3.1V, I_CHG = 104mA, REG02=03 and
REG02[0]=1
Fast charge to precharge, REG04[1] = 1
Precharge to fast charge, REG04[1] = 1
(Typical 200mV hysteresis)
VBAT = 2.6V, I_CHG = 256mA
I_TERM = 256mA, I_CHG = 2048mA
I_TERM = 256mA, I_CHG = 2048mA
VBAT falling
VBAT rising
VBAT<2.2V
VBAT falling, REG04[0] = 0
VBAT falling, REG04[0]=0
T_J = 25°C
T_J = –40°C – 125°C
USB100
USB150
USB500
USB900
IADP=1.5A, REG00[2:0]=101
VSYS<2.2V
IINDPM = 1.5A
D–, switch open
D+, switch open
MIN TYP
MAX UNITS
3.5
3.5 3.65
28
39
39
61
61
30
70
3.55
100
–0.5
-4
-7
–10
75
2.6
2.8
2.8
3.0
–20
265
–22.5
2.0
200
100
100
20
24
24
-2
85
125
440
750
1.3
100
395
435
0.5
7
50
100
–1
–1
4.35 V
V
41 mΩ
51
mΩ
58
82
mΩ
90
mV
mV
V
mV
0.5 %
4%
7%
10 %
175 mA
2.9 V
3.1 V
20 %
mA
22.5 %
V
mV
mA
mV
ms
28
mΩ
35
2%
100 mA
150 mA
500 mA
900 mA
1.5 A
mA
475 A x Ω
0.7 V
14 µA
150 µA
1 µA
1 µA
0.8 V
Copyright © 2013, Texas Instruments Incorporated
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