LM139AQML_14 Datasheet, PDF (8/29 Pages) Texas Instruments – LOW POWER LOW OFFSET VOLTAGE QUAD COMPARATORS

LM139AQML, LM139QML
SNOSAH8G – FEBRUARY 2005 – REVISED MARCH 2013
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LM139A 883, QMLV & RH, SMD 5962–9673801 Electrical Characteristics DC/AC
Parameters 50K Post Rad Limits +25°C⁽¹⁾
The following conditions apply, unless otherwise specified.
DC: +V = 5V, V_CM = 0V
AC: +V = 5V
Symbol
Parameters
Conditions
Notes Min Max
Unit
Sub-
groups
V_IO
Input Offset Voltage
± I_Bias
t_RLH
Input Bias Current
Response Time
+V = 5V, V_CM = 0
+V = 30V, V_CM = 0
+V = 30V, V_CM = 28.5V,
V_O = 1.5V
V_O = 1.5V
V_OD (Overdrive) = 50mV
-2.5 2.5
mV
1
-2.5 2.5
mV
1
-2.5 2.5
mV
1
See⁽²⁾ -110 -1.0
nA
1
0.9
µS
4
(1) Pre and post irradiation limits are identical to those listed under AC and DC electrical characteristics except as listed in the “Post
Radiation Limits” table. These parts may be dose rate sensitive in a space environment and demonstrate enhanced low dose rate effect.
Radiation end point limits for the noted parameters are ensured only for the conditions as specified in Mil-Std-883, Method 1019,
Condition A.
(2) The direction of the input current is out of the IC due to the PNP input stage. This current is essentially constant, independent of the
state of the output so no loading change exists on the reference or input lines.
LM139A 883, QMLV & RH, SMD 5962–9673801 Electrical Characteristics DC/AC
Parameters 100K Post Rad Limits +25°⁽¹⁾⁽²⁾
The following conditions apply, unless otherwise specified.
DC: +V = 5V, V_CM = 0V
AC: +V = 5V
Symbol
Parameters
Conditions
Notes Min Max
Unit
V_IO
Input Offset Voltage
± I_Bias
t_RLH
Input Bias Current
Response Time
+V = 5V, V_CM = 0
+V = 30V, V_CM = 0
+V = 30V, V_CM = 28.5V,
V_O = 1.5V
V_O = 1.5V
V_OD (Overdrive) = 50mV
-4.0 4.0
mV
-4.0 4.0
mV
-4.0 4.0
mV
See⁽³⁾ -110 -1.0
nA
1.0
µS
Sub-
groups
1
1
1
1
4
(1) Pre and post irradiation limits are identical to those listed under AC and DC electrical characteristics except as listed in the “Post
Radiation Limits” table. These parts may be dose rate sensitive in a space environment and demonstrate enhanced low dose rate effect.
Radiation end point limits for the noted parameters are ensured only for the conditions as specified in Mil-Std-883, Method 1019,
Condition A.
(2) Low dose rate testing has been performed on a wafer-by-wafer basis, per test method 1019, condition D, MIL-STD-883, with no
enhanced low dose rate sensitivity (ELDRS) effect. Pre and post irradiation limits are identical to those listed under AC and DC electrical
characteristics, except as listed in the “Post Radiation Limits” table. Radiation end point limits for the noted parameters are ensured for
only the conditions as specified in MIL-STD-883, Method 1019, condition D.
(3) The direction of the input current is out of the IC due to the PNP input stage. This current is essentially constant, independent of the
state of the output so no loading change exists on the reference or input lines.
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