LM139AQML_14 Datasheet, PDF (6/29 Pages) Texas Instruments – LOW POWER LOW OFFSET VOLTAGE QUAD COMPARATORS

LM139AQML, LM139QML
SNOSAH8G – FEBRUARY 2005 – REVISED MARCH 2013
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LM139A SMD 5962–8773901 Electrical Characteristics DC Parameters (continued)
The following conditions apply, unless otherwise specified. +V = 5V, V_CM = 0V
Symbol
Parameter
Conditions
Notes Min Max
Unit
V_CM
Common Mode Voltage Range +V = 30V
+V = 5V
See ⁽²⁾
0
V⁺ -
(2.0)
V
See ⁽²⁾
0
V⁺ -
(2.0)
V
(2) Parameter ensured by V_IO tests
Sub-
groups
1, 2, 3
1, 2, 3
LM139A SMD 5962–8773901 Electrical Characteristics AC Parameters
The following conditions apply, unless otherwise specified. +V = 5V
Symbol
Parameters
Conditions
Notes Min Max
Unit
Sub-
groups
t_RLH
Response Time
t_RHL
Response Time
V_OD = 5mV, R_L = 5.1KΩ
V_OD = 5mV, R_L = 5.1KΩ
5.0
µS
9
2.5
µS
9
LM139A 883, QMLV & RH, SMD 5962–9673801 Electrical Characteristics DC Parameters⁽¹⁾⁽²⁾
The following conditions apply, unless otherwise specified. +V = 5V, V_CM = 0V
Symbol
Parameters
Conditions
Notes Min Max
Unit
Sub-
groups
I_CC
Supply Current
I_CEX
Output Leakage Current
V_Sat
Saturation Voltage
R_L = Infinity
+V = 30V, R_L = Infinity
+V = 30V, V_O = 30V
I_Sink = 4mA
2.0
mA
1, 2, 3
2.0
mA
1, 2, 3
1.0
µA
1, 2, 3
400
mV
1
700
mV
2, 3
I_Sink
Output Sink Current
V_IO
Input Offset Voltage
V_O = 1.5V
6.0
mA
1
-2.0 2.0
mV
1
-4.0 4.0
mV
2, 3
+V = 30V
-2.0 2.0
mV
1
-4.0 4.0
mV
2, 3
± I_Bias
Input Bias Current
+V = 30V, V_CM = 28.5V,
V_O = 1.5V
+V = 30V, V_CM = 28.0V,
V_O = 1.5V
V_O = 1.5V
-2.0 2.0
mV
1
-4.0 4.0
mV
2, 3
See⁽³⁾ -100 -1.0
nA
1
See⁽³⁾ -300 -1.0
nA
2, 3
I_IO
Input Offset Current
V_O = 1.5V
-25 25
nA
1
-100 100
nA
2, 3
PSRR
Power Supply Rejection Ratio
+V = 5V to 30V
60
dB
1
CMRR
A_V
Common Mode Rejection Ratio
Voltage Gain
+V = 30V, V_CM = 0V to 28.5V
+V = 15V, R_L ≥ 15KΩ, V_O = 1V to
11V
60
dB
1
50
V/mV
1
(1) Pre and post irradiation limits are identical to those listed under AC and DC electrical characteristics except as listed in the “Post
Radiation Limits” table. These parts may be dose rate sensitive in a space environment and demonstrate enhanced low dose rate effect.
Radiation end point limits for the noted parameters are ensured only for the conditions as specified in Mil-Std-883, Method 1019,
Condition A.
(2) Low dose rate testing has been performed on a wafer-by-wafer basis, per test method 1019, condition D, MIL-STD-883, with no
enhanced low dose rate sensitivity (ELDRS) effect. Pre and post irradiation limits are identical to those listed under AC and DC electrical
characteristics, except as listed in the “Post Radiation Limits” table. Radiation end point limits for the noted parameters are ensured for
only the conditions as specified in MIL-STD-883, Method 1019, condition D.
(3) The direction of the input current is out of the IC due to the PNP input stage. This current is essentially constant, independent of the
state of the output so no loading change exists on the reference or input lines.
6
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