DRV8816PWPR Datasheet, PDF (8/17 Pages) Texas Instruments – DMOS DUAL ½-H-BRIDGE MOTOR DRIVERS

DRV8816
SLRS063 – SEPTEMBER 2013
Motor operation for dual brushed DC motors is controlled as follows:
Motor connected
ENx
to GND
0
1
1
Motor connected
ENx
to VBB
0
1
1
INx
OUTx
X
Z
0
L
1
H
INx
OUTx
X
Z
0
L
1
H
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Operation
Off (coast)
Brake
Forward
Operation
Off (coast)
Forward
Brake
Charge Pump
The charge pump is used to generate a supply above VBB to drive the source-side DMOS gates. A 0.1-μF
ceramic monolithic capacitor should be connected between CP1 and CP2 for pumping purposes. A 0.1-μF
ceramic monolithic capacitor should be connected between VCP and VBB to act as a reservoir to run the high-
side DMOS devices. The VCP voltage level is internally monitored and, in the case of a fault condition, the
outputs of the device are disabled.
0.1 µF
VBB
VCP
CP1
0.1 µF
CP2
Charge
VM
Pump
SENSE
A low-value resistor can be placed between the SENSE pin and ground for current-sensing purposes. To
minimize ground-trace IR drops in sensing the output current level, the current-sensing resistor should have an
independent ground return to the star ground point. This trace should be as short as possible. For low-value
sense resistors, the IR drops in the PCB can be significant, and should be taken into account.
To set a manual overcurrent trip threshold, place a resistor between the SENSE pin and GND. When the SENSE
pin rises above 500 mV, the H-bridge output is disabled (High-Z). The device will automatically retry with a period
of t_OCP.
The overcurrent trip threshold can be calculated using I_trip = 500 mV/R. The overcurrent trip level selected cannot
be greater than I_OCP.
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