DRV8816PWPR Datasheet, PDF (6/17 Pages) Texas Instruments – DMOS DUAL ½-H-BRIDGE MOTOR DRIVERS

DRV8816
SLRS063 – SEPTEMBER 2013
ELECTRICAL CHARACTERISTICS
over recommended operating conditions (unless otherwise noted)
PARAMETER
TEST CONDITIONS
POWER SUPPLIES (VBB)
VBB
VBB operating voltage
I_VBB
VBB operating supply current
f_PWM < 50 kHz
Charge pump on, Outputs disabled
I_VBBQ
VBB sleep-mode supply current nSLEEP = 0, T_J = 25°C
CONTROL INPUTS (IN1, IN2, EN1, EN2, nSLEEP)
V_IL
Input logic low voltage
V_IH
Input logic high voltage
IN1, IN2, EN1, EN2
I_IL
Input logic low current
I_IH
Input logic high current
IN1, IN2, EN2
I_IL
Input logic low current
I_IH
Input logic high current
EN1
V_IL
Input logic low voltage
V_IH
Input logic high voltage
I_IL
Input logic low current
nSLEEP
I_IH
Input logic high current
R_PD
Pulldown resistance
SERIAL AND CONTROL OUTPUT (nFAULT)
V_IN = 0.8 V
V_IN = 2.0 V
V_IN = 0.8 V
V_IN = 2.0 V
V_IN = 0.8 V
V_IN = 2.0 V
V_IN = 0.8 V
V_IN = 2.8 V
V_IN = 0.8 V
V_IN = 2.8 V
V_OL
Output logic low voltage
I_sink = 1 mA
DMOS DRIVERS (OUT1, OUT2, SENSE)
R_ds(ON) Output ON resistance
V_TRP
V_f
t_pd
SENSE trip voltage
Body diode forward voltage
Propagation delay time
Source driver, I_OUT = –2.8 A, T_J = 25°C
Source driver, I_OUT = –2.8 A, T_J = 125°C
Sink driver, I_OUT = –2.8 A, T_J = 25°C
Sink driver, I_OUT = –2.8 A, T_J = 125°C
R_SENSE between SENSE and GND
Source diode, I_f = –2.8 A
Sink diode, I_f = 2.8 A
INx, Change to source or sink ON
INx, Change to source or sink OFF
t_COD
Crossover delay
DAGain Differential amplifier gain
Sense = 0.1 V to 0.4 V
Protection Circuits
V_UVLO
V_CPUV
I_OCP
t_DEG
t_OCP
T_OTW
T_{OTW HYS}
T_OTS
T_{OTS HYS}
VBB undervoltage lockout
VCP undervoltage lockout⁽¹⁾
Overcurrent protection trip level
Overcurrent deglitch time
Overcurrent retry time
Thermal shutdown temperature
Thermal shutdown hysteresis
Thermal shutdown hysteresis
Thermal shutdown hysteresis
VBB rising
VBB rising; CPUV recovery
Die temperature T_j
Die temperature T_j
Die temperature T_j
Die temperature T_j
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MIN TYP MAX UNIT
8
38
V
6
mA
3.2
mA
10
µA
0
0.8
V
2
5.5
–20
+20
μA
20
16
40
μA
40 100
0.8
V
2.2
V
10
μA
27
50
100
kΩ
0.4
V
0.48
0.74 0.85
Ω
0.35
0.52 0.7
500
mV
1.4
V
1.4
600
ns
100
500
ns
5
V/V
6.5 7.5
V
12 13.8
V
3
A
3.0
µs
1.6
ms
160
°C
15
°C
175
°C
15
°C
(1) Whenever VCP is less than VM + 10 V, a CPUV event occurs. This fault will be asserted whenever VBB is below 12 V. Note that the H-
bridges will remain enabled until VBB = V_UVLO even through nFAULT is pulled low.
6
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