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LME49610 Datasheet, PDF (7/21 Pages) National Semiconductor (TI) – High Performance, High Fidelity, High Current Audio Buffer
LME49610
www.ti.com
SNAS435B – APRIL 2008 – REVISED APRIL 2013
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Gain vs Frequency
vs RLOAD
Wide BW Mode (BW pin = VEE), VS = ±15V
20
Phase vs Frequency
vs RLOAD
Wide BW Mode (BW pin = VEE), VS = ±15V
0
15
10
5
0
-5
1M
RL = 1 k:
RL = 100:
RL = 50:
10M
100M
1G
FREQUENCY (Hz)
Figure 15.
-10
-20
-30
-40
RL = 1 k:
RL = 100:
RL = 50:
-50
1M
10M
100M
1G
FREQUENCY (Hz)
Figure 16.
Gain vs Frequency
vs RLOAD
Low IQ Mode (BW pin = Float), VS = ±15V
20
18
16
14
12
10
8
RL = 1 k:
6
RL = 100:
4
RL = 50:
2
0
-2
-4
1M
10M
100M
1G
FREQUENCY (Hz)
Figure 17.
Phase vs Frequency
vs RLOAD
Low IQ Mode (BW pin = Float), VS = ±15V
0
-10
-20
-30
RL = 1 k:
RL = 100:
-40
RL = 50:
-50
1M
10M
100M
1G
FREQUENCY (Hz)
Figure 18.
+PSRR vs Frequency
VS = +15V and ±22V, Wide BW Mode
(BW pin = VEE)
80
70
60
50
40
30
20
10
0
20
200
2k
20k
200k
FREQUENCY (Hz)
Figure 19.
+PSRR vs Frequency
VS = ±15V and ±22V, Low IQ Mode
(BW pin = Float)
80
70
60
50
40
30
20
10
0
20
200
2k
20k
200k
FREQUENCY (Hz)
Figure 20.
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