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| LME49610 Datasheet, PDF (6/21 Pages) National Semiconductor (TI) – High Performance, High Fidelity, High Current Audio Buffer | |||
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LME49610
SNAS435B â APRIL 2008 â REVISED APRIL 2013
www.ti.com
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Gain vs Frequency
vs RLOAD
Wide BW Mode (BW pin = VEE), VS = ±22V
20
RL = 100:
RL = 1 k:
15
Phase vs Frequency
vs RLOAD
Wide BW Mode (BW pin = VEE), VS = ±22V
0
RL = 100:
RL = 1 k:
-10
10
-20
5
-30
0
-5
106
RL = 50:
107
108
109
FREQUENCY (Hz)
Figure 9.
Gain vs Frequency
vs RLOAD
Low IQ Mode (BW pin = Float), VS = ±22V
20
RL = 1 k:
RL = 100:
15
-40
RL = 50:
-50
106
107
108
109
FREQUENCY (Hz)
Figure 10.
Phase vs Frequency
vs RLOAD
Low IQ Mode (BW pin = Float), VS = ±22V
0
RL = 100:
RL = 1 k:
-10
10
-20
5
-30
0
-5
106
RL = 50:
107
108
109
FREQUENCY (Hz)
Figure 11.
Gain vs Frequency
vs Quiescent Current
VS = ±15V
20
IQ = 10.3
15
IQ = 13.3
10
5
IQ = 7.4
0
-5
1M
10M
100M
1G
FREQUENCY (Hz)
Figure 13.
-40
RL = 50:
-50
106
107
108
109
FREQUENCY (Hz)
Figure 12.
Phase vs Frequency
vs Quiescent Current
VS = ±15V
0
-10
-20
-30
IQ = 13.3 mA
-40 IQ = 10.3 mA
IQ=7.4 mA
-50
1M
10M
100M
1G
FREQUENCY (Hz)
Figure 14.
6
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