SD18532NQ5B Datasheet, PDF (6/15 Pages) Texas Instruments – N-Channel NexFET Power MOSFET

CSD18532NQ5B
SLPS440A – JUNE 2013 – REVISED DECEMBER 2015
Typical MOSFET Characteristics (continued)
(T_A = 25°C unless otherwise stated)
2.2
V_GS = 6 V
2
V_GS = 10 V
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
T_C - Case Temperature (°C)
D008
I_D = 25 A
Figure 8. Normalized On-State Resistance vs Temperature
1000
100
10
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100
T_C = 25°C
T_C = 125°C
10
1
0.1
0.01
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
V_SD - Source-to-Drain Voltage (V)
D009
Figure 9. Typical Diode Forward Voltage
300
T_C = 25q C
T_C = 125q C
100
1
0.1
0.1
DC
10 ms
1 ms
100 µs
10 µs
1
10
V_DS - Drain-to-Source Voltage (V)
Single Pulse, Max R_θJC = 0.8°C/W
100
D010
Figure 10. Maximum Safe Operating Area
120
10
0.01
0.1
1
T_AV - Time in Avalanche (ms)
D011
Figure 11. Single Pulse Unclamped Inductive Switching
100
80
60
40
20
0
-50 -25
0 25 50 75 100 125 150 175
T_C - Case Temperature (°C)
D012
Figure 12. Maximum Drain Current vs Temperature
6
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