SD18532NQ5B Datasheet, PDF (5/15 Pages) Texas Instruments – N-Channel NexFET Power MOSFET

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Typical MOSFET Characteristics (continued)
(T_A = 25°C unless otherwise stated)
200
180
160
140
120
100
80
60
40
V_GS = 6 V
20
V_GS = 8 V
V_GS = 10 V
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
V_DS - Drain-to-Source Voltage (V)
D002
Figure 2. Saturation Characteristics
10
9
8
7
6
5
4
3
2
1
0
0 5 10 15 20 25 30 35 40 45 50
Q_g - Gate Charge (nC)
D004
I_D = 25 A
V_DS = 30 V
Figure 4. Gate Charge
3.4
3.2
3
2.8
2.6
2.4
2.2
2
1.8
-75 -50 -25 0 25 50 75 100 125 150 175
T_C - Case Temperature (°C)
D006
I_D = 250 µA
Figure 6. Threshold Voltage vs Temperature
CSD18532NQ5B
SLPS440A – JUNE 2013 – REVISED DECEMBER 2015
200
180
160
140
120
100
80
60
40
20
0
1
100000
10000
T_C = 125° C
T_C = 25° C
T_C = -55° C
2
3
4
5
6
7
8
V_GS - Gate-to-Source Voltage (V)
D003
V_DS = 5 V
Figure 3. Transfer Characteristics
C_iss = C_gd + C_gs
C_oss = C_ds + C_gd
C_rss = C_gd
1000
100
10
0
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
D005
Figure 5. Capacitance
14
T_C = 25°C, I _D = 25 A
12
T_C = 125°C, I _D = 25 A
10
8
6
4
2
0
0 2 4 6 8 10 12 14 16 18 20
V_GS - Gate-to-Source Voltage (V)
D007
Figure 7. On-State Resistance vs Gate-to-Source Voltage
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