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SD18532NQ5B Datasheet, PDF (3/15 Pages) Texas Instruments – N-Channel NexFET Power MOSFET
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5 Specifications
CSD18532NQ5B
SLPS440A – JUNE 2013 – REVISED DECEMBER 2015
5.1 Electrical Characteristics
(TA = 25°C unless otherwise stated)
PARAMETER
STATIC CHARACTERISTICS
BVDSS
IDSS
IGSS
VGS(th)
Drain-to-source voltage
Drain-to-source leakage current
Gate-to-source leakage current
Gate-to-source threshold voltage
RDS(on) Drain-to-source on-resistance
gfs
Transconductance
DYNAMIC CHARACTERISTICS
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer capacitance
RG
Series gate resistance
Qg
Gate charge total (10 V)
Qgd
Gate charge gate to drain
Qgs
Gate charge gate to source
Qg(th)
Gate charge at Vth
Qoss
Output charge
td(on)
Turn on delay time
tr
Rise time
td(off)
Turn off delay time
tf
Fall time
DIODE CHARACTERISTICS
VSD
Diode forward voltage
Qrr
Reverse recovery charge
trr
Reverse recovery time
TEST CONDITIONS
VGS = 0 V, ID = 250 μA
VGS = 0 V, VDS = 48 V
VDS = 0 V, VGS = 20 V
VDS = VGS, ID = 250 μA
VGS = 6 V, ID = 25 A
VGS = 10 V, ID = 25 A
VDS = 30 V, ID = 25 A
VGS = 0 V, VDS = 30 V, ƒ = 1 MHz
VDS = 30 V, ID = 25 A
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 10 V,
IDS = 25 A, RG = 0 Ω
ISD = 25 A, VGS = 0 V
VDS= 30 V, IF = 25 A,
di/dt = 300 A/μs
MIN TYP MAX UNIT
60
V
1 μA
100 nA
2.4 2.8 3.4 V
3.5 4.4 mΩ
2.7 3.4 mΩ
140
S
4100 5340 pF
495 644 pF
16
21 pF
1.2 2.4 Ω
49
64 nC
7.9
nC
16
nC
11
nC
69
nC
8.2
ns
8.7
ns
20
ns
2.7
ns
0.8
1V
139
nC
64
ns
5.2 Thermal Information
(TA = 25°C unless otherwise stated)
THERMAL METRIC
RθJC
RθJA
Junction-to-case thermal resistance(1)
Junction-to-ambient thermal resistance (1)(2)
MIN TYP MAX UNIT
0.8 °C/W
50 °C/W
(1) RθJC is determined with the device mounted on a 1 inch2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu pad on a 1.5 inch × 1.5 inch (3.81 cm ×
3.81 cm), 0.06 inch (1.52 mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board design.
(2) Device mounted on FR4 material with 1 inch2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu.
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