OPA2314-Q1 Datasheet, PDF (6/28 Pages) Texas Instruments – 3-MHz, Low-Power, Low-Noise, RRIO, 1.8-V CMOS Operational Amplifier

OPA2314-Q1
SLOS896A – DECEMBER 2014 – REVISED JANUARY 2015
6.6 Typical Characteristics
At T_A = 25°C, R_L = 10 kΩ connected to V_S/2, V_CM = V_S/2, and V_OUT = V_S/2, unless otherwise noted.
Table 1. Characteristic Performance Measurements
TITLE
Open-Loop Gain and Phase vs Frequency
Open-Loop Gain vs Temperature
Quiescent Current vs Supply Voltage
Quiescent Current vs Temperature
Offset Voltage Production Distribution
Offset Voltage Drift Distribution
Offset Voltage vs Common-Mode Voltage (Maximum Supply)
Offset Voltage vs Temperature
CMRR and PSRR vs Frequency (RTI)
CMRR and PSRR vs Temperature
0.1-Hz to 10-Hz Input Voltage Noise (5.5 V)
Input Voltage Noise Spectral Density vs Frequency (1.8 V, 5.5 V)
Input Voltage Noise vs Common-Mode Voltage (5.5 V)
Input Bias and Offset Current vs Temperature
Open-Loop Output Impedance vs Frequency
Maximum Output Voltage vs Frequency and Supply Voltage
Output Voltage Swing vs Output Current (over Temperature)
Closed-Loop Gain vs Frequency, G = 1, –1, 10 (1.8 V)
Closed-Loop Gain vs Frequency, G = 1, –1, 10 (5.5 V)
Small-Signal Overshoot vs Load Capacitance
Small-Signal Step Response, Noninverting (1.8 V)
Small-Signal Step Response, Noninverting ( 5.5 V)
Large-Signal Step Response, Noninverting (1.8 V)
Large-Signal Step Response, Noninverting ( 5.5 V)
Positive Overload Recovery
Negative Overload Recovery
No Phase Reversal
Channel Separation vs Frequency (Dual)
THD+N vs Amplitude (G = +1, 2 kΩ, 10 kΩ)
THD+N vs Amplitude (G = –1, 2 kΩ, 10 kΩ)
THD+N vs Frequency (0.5 V_RMS, G = +1, 2 kΩ, 10 kΩ)
EMIRR
FIGURE
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