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OPA2314-Q1 Datasheet, PDF (3/28 Pages) Texas Instruments – 3-MHz, Low-Power, Low-Noise, RRIO, 1.8-V CMOS Operational Amplifier
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5 Pin Configuration and Functions
OPA2314-Q1
SLOS896A – DECEMBER 2014 – REVISED JANUARY 2015
D PACKAGE
8-Pin SOIC
Top View
OUT A 1
–IN A 2
+IN A 3
V– 4
8 V+
7 OUT B
6 –IN B
5 +IN B
NAME
+IN A
–IN A
+IN B
– IN B
OUT A
OUT B
V+
V–
PIN
NO.
3
2
5
6
1
7
8
4
Pin Functions
I/O
DESCRIPTION
I
Noninverting input, channel A
I
Inverting input, channel A
I
Noninverting input, channel B
I
Inverting input, channel B
O
Output, channel A
O
Output, channel B
—
Positive (highest) power supply
—
Negative (lowest) power supply
6 Specifications
6.1 Absolute Maximum Ratings
Over operating free-air temperature range (unless otherwise noted) (1)
MIN
MAX
UNIT
Supply voltage
Voltage (2)
Current (2)
Output short-circuit(3)
Signal input terminals
Signal input terminals
7
V
(V–) – 0.5 (V+) + 0.5
V
±10
mA
Continuous
mA
Operating temperature, TA
Junction temperature, TJ
Storage temperature, Tstg
–40
150
°C
150
°C
–65
150
°C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Input terminals are diode-clamped to the power-supply rails. Input signals that can swing more than 0.5 V beyond the supply rails should
be current limited to 10 mA or less.
(3) Short-circuit to ground, one amplifier per package.
6.2 ESD Ratings
V(ESD) Electrostatic discharge
Human body model (HBM), per AEC Q100-002(1)
Charged device model (CDM), per AEC Q100-011
VALUE
±2000
±1000
(1) AEC Q100-002 indicates HBM stressing is done in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
UNIT
V
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