LMH6702 Datasheet, PDF (6/25 Pages) National Semiconductor (TI) – Ultra Low Distortion, Wideband Op Amp

LMH6702
SNOSA03H – NOVEMBER 2002 – REVISED MAY 2016
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Electrical Characteristics (continued)
at A_V = 2, V_S = ±5 V, R_L = 100 Ω, R_F = 237 Ω (unless otherwise noted)⁽¹⁾
PARAMETER
TEST CONDITIONS
STATIC, DC PERFORMANCE
V_IO
DV_IO
I_BN
DI_BN
I_BI
DI_BI
Input offset voltage
Input offset voltage average
drift
See ⁽⁶⁾
Input bias current
Non-Inverting ⁽⁷⁾
Input bias current average
drift
Non-Inverting ⁽⁶⁾
Input bias current
Inverting ⁽⁷⁾
Input bias current average
drift
Inverting ⁽⁶⁾
-40 ≤ T_J ≤ 85
-40 ≤ T_J ≤ 85
-40 ≤ T_J ≤ 85
PSRR Power supply rejection ratio DC
CMRR
Common mode rejection
ration
DC
I_CC
Supply current
R_L = ∞
MISCELLANEOUS PERFORMANCE
R_IN
C_IN
R_OUT
Input resistance
Input capacitance
Output resistance
Non-Inverting
Non-Inverting
Closed Loop
V_OL
Output voltage range
R_L = 100 Ω
CMIR
I_O
Input voltage range
Output current
Common Mode
-40 ≤ T_J ≤ 85
-40 ≤ T_J ≤ 85
-40 ≤ T_J ≤ 85
-40 ≤ T_J ≤ 85
MIN ⁽²⁾
TYP ⁽³⁾
MAX⁽²⁾ UNIT
±1.0 ±4.5
mV
±6.0
−13
µV/°C
−6
–15
µA
–21
+40
nA/°C
−8
±30
µA
±34
−10
nA/°C
47
52
dB
45
45
48
dB
44
11.0
12.5 16.1
mA
10.0
17.5
1.4
MΩ
1.6
pF
30
mΩ
±3.3
±3.5
V
±3.2
±1.9
±2.2
V
50
80
mA
(6) Drift determined by dividing the change in parameter at temperature extremes by the total temperature change.
(7) Negative input current implies current flowing out of the device.
6
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