LMH6654 Datasheet, PDF (6/31 Pages) National Semiconductor (TI) – Single/Dual Low Power, 250 MHz, Low Noise Amplifiers

LMH6654, LMH6655
SNOS956E – JUNE 2001 – REVISED AUGUST 2014
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±5V Electrical Characteristics (continued)
Unless otherwise specified, all limits ensured for V⁺ = +5V, V^− = −5V, V_CM = 0V, A_V = +1, R_F = 25Ω for gain = +1, R_F = 402Ω
for gain ≥ +2, and R_L = 100Ω. Boldface limits apply at the temperature extremes.
PARAMETER
TEST CONDITIONS
MIN ⁽¹⁾
TYP ⁽²⁾
MAX⁽¹⁾ UNIT
OUTPUT CHARACTERISTICS
Output Swing High
No Load
3.4
3.2
3.6
V_O
Output Swing Low
No Load
−3.9
−3.7
−3.5
V
Output Swing High
R_L = 100Ω
3.2
3.0
3.4
Output Swing Low
R_L = 100Ω
−3.6
−3.4
−3.2
I_SC
Short Circuit Current ⁽⁵⁾
I_OUT
Output Current
R_O
Output Resistance
POWER SUPPLY
Sourcing, V_O = 0V
ΔV_IN = 200 mV
Sinking, V_O = 0V
ΔV_IN = 200 mV
Sourcing, V_O = +3V
Sinking, V_O = −3V
A_V = +1, f <100 kHz
145
130
280
mA
100
80
185
80
mA
120
0.08
Ω
PSRR
I_S
Power Supply Rejection Ratio
Supply Current (per channel)
Input Referred,
V_S = ±5V to ±6V
60
76
4.5
dB
6
7
mA
(5) Continuous short circuit operation at elevated ambient temperature can result in exceeding the maximum allowed junction temperature
at 150°C.
6
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