DS90CP02 Datasheet, PDF (6/14 Pages) Texas Instruments – DS90CP02 1.5 Gbps 2x2 LVDS Crosspoint Switch

Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage (V_DD)
CMOS Input Voltage
LVDS Receiver Input Voltage
−0.3V to +4.0V
−0.3V to (V_DD +0.3V)
−0.3V to +3.6V
LVDS Driver Output Voltage
−0.3V to +3.6V
LVDS Output Short Circuit Current
40mA
Junction Temperature
+150°C
Storage Temperature
−65°C to +150°C
Lead Temperature
(Soldering, 4sec.)
+260°C
Maximum Package Power Dissipation at 25°C
LLP-28
4.31 W
Derating above 25°C
LLP-28
Thermal Resistance, θ_JA
LLP-28
ESD Rating
HBM, 1.5 kΩ, 100 pF
EIAJ, 0Ω, 200 pF
34.5 mW/°C
29°C/W
6.5 kV
>250V
Recommended Operating
Conditions
Supply Voltage (V_DD– GND)
Receiver Input Voltage
Operating Free Air
Temperature
Junction Temperature
Min Typ Max Unit
3.0 3.3 3.6 V
0
3.6 V
−40 25 85 °C
150 °C
Electrical Characteristics
Over recommended operating supply and temperature ranges unless other specified.
Symbol
Parameter
Conditions
Min
LVTTL DC SPECIFICATIONS (SEL0, SEL1, EN1, EN2)
V_IH
High Level Input Voltage
V_IL
Low Level Input Voltage
I_IH
High Level Input Current
V_IN = V_DD = V_DDMAX
I_IL
Low Level Input Current
V_IN = V_SS, V_DD = V_DDMAX
C_IN1
Input Capacitance
Any Digital Input Pin to V_SS
V_CL
Input Clamp Voltage
I_CL = −18 mA
LVDS INPUT DC SPECIFICATIONS (IN0±, IN1±)
V_TH
Differential Input High Threshold V_CM = 0.8V or 1.2V or 3.55V, V_DD = 3.6V
(Note 3)
V_TL
Differential Input Low Threshold V_CM = 0.8V or 1.2V or 3.55V, V_DD = 3.6V
V_ID
Differential Input Voltage
V_CM = 0.8V to 3.55V, V_DD = 3.6V
V_CMR
Common Mode Voltage Range
V_ID = 150 mV, V_DD = 3.6V
C_IN2
Input Capacitance
IN+ or IN− to V_SS
I_IN
Input Current
V_IN = 3.6V, V_DD = V_DDMAX or 0V
V_IN = 0V, V_DD = V_DDMAX or 0V
LVDS OUTPUT DC SPECIFICATIONS (OUT0±, OUT1±)
V_OD
Differential Output Voltage,
0% Pre-emphasis (Note 3)
R_L = 100Ω between OUT+ and OUT−
ΔV_OD
Change in V_OD between
Complementary States
V_OS
ΔV_OS
Offset Voltage (Note 4)
Change in V_OS between
Complementary States
I_OS
Output Short Circuit Current, One OUT+ or OUT− Short to GND
Complementary Output
C_OUT
Output Capacitance
OUT+ or OUT− to GND when TRI-
STATE
2.0
GND
−10
−10
−1.5
−100
100
0.05
−10
−10
250
−35
1.09
−35
Typ
(Note 2)
3.5
−0.8
0
0
3.5
400
1.25
−60
5.5
Max
V_DD
0.8
+10
+10
100
3.55
+10
+10
575
35
1.475
35
-90
Units
V
V
µA
µA
pF
V
mV
mV
mV
V
pF
µA
µA
mV
mV
V
mV
mA
pF
5
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