DS90C031QML Datasheet, PDF (6/20 Pages) Texas Instruments – DS90C031QML LVDS Quad CMOS Differential Line Driver

Note 2: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed
specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test
conditions.
Note 3: The maximum power dissipation must be derated at elevated temperatures and is dictated by T_Jmax (maximum junction temperature), θ_JA (package
junction to ambient thermal resistance), and T_A (ambient temperature). The maximum allowable power dissipation at any temperature is P_Dmax = (T_Jmax - T_A)/
θ_JA or the number given in the Absolute Maximum Ratings, whichever is lower.
Note 4: Human body model, 1.5 kΩ in series with 100 pF.
Note 5: Derate LCC @ 12.8mW/°C above +25°C. Derate Ceramic flatpack @ 6.9mW/°C above +25°C.
Note 6: Tested during V_OH / V_OL tests.
Note 7: Channel-to-Channel Skew is defined as the difference between the propagation delay of the channel and the other channels in the same chip with an
event on the inputs.
Note 8: Chip to Chip Skew is defined as the difference between the minimum and maximum specified differential propagation delays.
Note 9: Parameter guaranteed, not tested 100%
Note 10: Pre and Post irradiation limits are identical to those listed under AC & DC electrical characteristics except as listed in the “Post Radiation Limits” table.
Radiation end point limits for the noted parameters are guaranteed only for the conditions, as specified.
Parameter Measurement Information
FIGURE 1. Driver V_OD and V_OS Test Circuit
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FIGURE 2. Driver Propagation Delay and Transition Time Test Circuit
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