CC2591_17 Datasheet, PDF (6/25 Pages) Texas Instruments – 2.4-GHz RF Front End

CC2591
SWRS070B – MARCH 2008 – REVISED SEPTEMBER 2014
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4 Specifications
4.1 Absolute Maximum Ratings⁽¹⁾⁽²⁾
Under no circumstances must the absolute maximum ratings be violated. Stress exceeding one or more of the limiting values
may cause permanent damage to the device.
PARAMETER
VALUE
UNIT
Supply voltage
Voltage on any digital pin
Input RF level
All supply pins must have the same voltage
–0.3 to 3.6
–0.3 to V_DD + 0.3, max 3.6
10
V
dBm
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to V_SS, unless otherwise noted.
4.2 Handling Ratings
T_stg
V_ESD
Storage temperature range
Electrostatic discharge (ESD)
performance:
Human Body Model (HBM), per ANSI/ESDA/JEDEC
JS001 ⁽¹⁾
Charged Device Model (CDM),
per JESD22-C101⁽²⁾
MIN
–50
–600
–500
MAX
150
600
500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
UNIT
°C
V
V
4.3 Recommended Operating Conditions
The operating conditions for CC2591 are listed below.
PARAMETER
Ambient temperature range
Operating supply voltage
Operating frequency range
MIN
–40
2
2400
MAX
85
3.6
2483.5
UNIT
°C
V
MHz
4.4 Electrical Characteristics
T_C = 25°C, V_DD = 3 V , f_RF= 2440 MHz (unless otherwise noted). Measured on CC2591EM reference design including external
matching components.
PARAMETER
TEST CONDITIONS
MIN TYP MAX
UNIT
Receive current, High-Gain Mode
HGM = 1
3.4
4
Receive current, Low-Gain Mode
Transmit current
Transmit current
HGM = 0
P_IN = 0.5 dBm
No input signal
1.7
2
mA
112
40
50
Power-down current
EN = PAEN = 0
0.1 0.3
μA
High-input level (control pins)
Low-input level (control pins)
EN, PAEN, HGM, RXTX
EN, PAEN, HGM, RXTX
1.3
V_DD
V
0.3
Power down - Receive mode switching
time
12
μs
Power down - Transmit mode switching
time
1
μs
RF Receive
Gain, High-Gain Mode
HGM = 1
11
dB
Gain, Low-Gain Mode
HGM = 0
1
dB
Gain variation, 2400 – 2483.5 MHz, High-
Gain Mode
HGM = 1
1.3
dB
Gain variation, 2.0 V – 3.6 V, High-Gain
Mode
HGM = 1
1.5
dB
6
Specifications
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