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DRV8804PWP Datasheet, PDF (5/18 Pages) Texas Instruments – QUAD SERIAL INTERFACE LOW-SIDE DRIVER IC
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DRV8804
www.ti.com
SLVSAW4C – JULY 2011 – REVISED FEBRUARY 2012
RECOMMENDED OPERATING CONDITIONS
VM
VCLAMP
IOUT
Power supply voltage range
Output clamp voltage range(1)
Continuous output current, single channel on, TA = 25°C, SOIC package(2)
Continuous output current, four channels on, TA = 25°C, SOIC package(2)
Continuous output current, single channel on, TA = 25°C, HTSSOP package(2)
Continuous output current, four channels on, TA = 25°C, HTSSOP package(2)
(1) VCLAMP is used only to supply the clamp diodes. It is not a power supply input.
(2) Power dissipation and thermal limits must be observed.
MIN NOM
8.2
0
MAX
60
60
1.5
0.8
1.5
0.8
UNIT
V
V
A
ELECTRICAL CHARACTERISTICS
TA = 25°C, over recommended operating conditions (unless otherwise noted)
PARAMETER
TEST CONDITIONS
POWER SUPPLIES
IVM
VUVLO
VM operating supply current
VM undervoltage lockout
voltage
VM = 24 V
VM rising
LOGIC-LEVEL INPUTS (SCHMITT TRIGGER INPUTS WITH HYSTERESIS)
VIL
Input low voltage
VIH
Input high voltage
VHYS
Input hysteresis
IIL
Input low current
VIN = 0
IIH
Input high current
VIN = 3.3 V
RPD
Pulldown resistance
nFAULT OUTPUT (OPEN-DRAIN OUTPUT)
VOL
Output low voltage
IO = 5 mA
IOH
Output high leakage current
VO = 3.3 V
SDATAOUT OUTPUT (OPEN-DRAIN OUTPUT WITH INTERNAL PULLUP)
VOL
Output low voltage
VOH
Output high voltage
IOH
Output high leakage current
LOW-SIDE FETS
IO = 5 mA
IO = 100 µA, VM = 24 V
VO = 3.3 V
RDS(ON) FET on resistance
IOFF
Off-state leakage current
HIGH-SIDE DIODES
VM = 24 V, IO = 700 mA, TJ = 25°C
VM = 24 V, IO = 700 mA, TJ = 85°C
VF
Diode forward voltage
IOFF
Off-state leakage current
OUTPUTS
VM = 24 V, IO = 700 mA, TJ = 25°C
VM = 24 V, TJ = 25°C
tR
Rise time
tF
Fall time
PROTECTION CIRCUITS
VM = 24 V, IO = 700 mA, Resistive load
VM = 24 V, IO = 700 mA, Resistive load
IOCP
Overcurrent protection trip level
tOCP
Overcurrent protection deglitch
time
tRETRY
tTSD
Overcurrent protection retry
time
Thermal shutdown temperature Die temperature(1)
(1) Not production tested.
MIN TYP MAX UNIT
1.6
2.1 mA
8.2 V
0.6
2
0.45
–20
100
0.7 V
V
V
20 μA
100 μA
kΩ
0.5 V
1 μA
0.5 V
2.5
4.5
5.5 V
1 µA
0.5
0.75
–50
Ω
0.8
50 μA
1.2
–50
V
50 μA
50
300 ns
50
300 ns
2.3
3.8 A
3.5
µs
1.2
ms
150
160
180 °C
Copyright © 2011–2012, Texas Instruments Incorporated
Product Folder Link(s): DRV8804
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