BQ24165_14 Datasheet, PDF (5/38 Pages) Texas Instruments – 2.5A, Dual-Input, Single Cell Switch Mode Li-Ion Battery Charger with Power Path Management

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bq24165
bq24166
bq24167
SLUSAP4B – DECEMBER 2011 – REVISED MARCH 2013
ELECTRICAL CHARACTERISTICS (continued)
Circuit of Figure 1, V_SUPPLY = V_USB or V_IN (whichever is supplying the IC), V_UVLO < V_SUPPLY < V_OVP and V_SUPPLY > V_BAT+V_SLP,
mm T_J = 0°C–125°C and T_J = 25ºC for typical values (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNITS
I_INLIM
Maximum input current limit programmable
range for IN input
I_INLIM
=
K_{ILI M}
R_ILIM
1000
2500
mA
K_ILIM
V_{IN_DPM_IN}
V_{IN_DPM_USB}
V_DRV
I_DRV
V_{DO_DRV}
V_UVLO
V_SLP
V_{SLP_EXIT}
V_OVP
V_OVP(HYS)
Maximum input current factor for IN input
VIN_DPM threshold programmable range for
IN Input
VDPM threshold
VIN_DPM threshold for USB Input
Internal bias regulator voltage
DRV Output current
DRV Dropout voltage
(V_SUPPLY – V_DRV)
Under-voltage lockout threshold voltage
Sleep-mode entry threshold, VSUPPLY-
VBAT
Sleep-mode exit hysteresis
Deglitch time for supply rising above
V_SLP+V_{SLP_EXIT}
Input supply OVP threshold voltage
V_OVP hysteresis
USB100, USB150
USB500, USB800, USB900, 1.5A current limit selected
V_SUPPLY > 5.45V
I_SUPPLY = 1 A, V_SUPPLY = 5 V, I_DRV = 10 mA
V_IN or V_USB rising, 150mV Hysteresis
2.0 V ≤ V_BAT ≤ V_OREG, V_IN falling
2.0 V ≤ V_BAT ≤ V_OREG
Rising voltage, 2-mV over drive, t_RISE = 100 ns
USB, V_USB Rising
IN, V_IN Rising
Supply falling from V_OVP
V_BOVP
Battery OVP threshold voltage
V_BAT threshold over V_OREG to turn off charger during charge
V_BATUVLO
I_LIMIT
T_SHUTDWN
T_REG
Battery UVLO threshold voltage
Cycle by Cycle current limit
Thermal shutdown
Thermal regulation threshold
Safety Timer
IUSB_, CE_, PG, CHG
V_IH
Input high threshold
V_IL
Input low threshold
I_IH
High-level leakage current
V_OL
Low-level output saturation voltage
PWM CONVERTER
Internal top reverse blocking MOSFET on-
resistance
Internal top N-channel Switching MOSFET
on-resistance
Internal bottom N-channel MOSFET on-
resistance
f_OSC
Oscillator frequency
D_MAX
Maximum duty cycle
D_MIN
Minimum duty cycle
BATTERY-PACK NTC MONITOR (bq24166, bq24167)
V_HOT
V_HYS(HOT)
V_WARM
V_HYS(WARM)
V_COOL
V_HYS(COOL)
V_COLD
V_HYS(COLD)
T_SOFF
t_DGL(TS)
High temperature threshold
Hysteresis on high threshold
Warm temperature threshold
Hysteresis on high threshold
Cool temperature threshold
Hysteresis on low threshold
Low temperature threshold
Hysteresis on low threshold
TS Disable threshold
Deglitch time on TS change
10C Hysteresis
V _CHG = V _PG = 5V
I_O = 10 mA, sink current
I_{IN_LIMIT} = 500 mA, Measured from V_USB to PMIDU
I_{IN_LIMIT} = 500 mA, Measured from V_IN to PMIDI
Measured from PMIDU to SW
Measured from PMIDI to SW
Measured from SW to PGND
V_TS falling
V_TS rising
V_TS falling, bq24167 only
V_TS rising, bq24167 only
V_TS rising, bq24167 only
V_TS falling, bq24167 only
V_TS rising
V_TS falling
V_TS rising, 2%V_DRV Hysteresis
238
251
264
AΩ
4.2
10
V
1.18
1.2
1.22
V
4.175
4.28
4.36
V
4.35
4.44
4.52
5
5.2
5.45
V
10
mA
450
mV
3.6
3.8
4.0
V
0
40
100
mV
40
100
175
mV
30
ms
6.3
6.5
6.7
V
10.3
10.5
10.7
100
mV
1.025 ×
V_BATREG
1.05 ×
V_BATREG
1.075 ×
V_BATREG
V
2.5
V
4.1
4.9
5.6
A
165
C
120
C
324
360
396
min
1.3
V
0.4
V
1
µA
0.4
V
95
175
mΩ
45
80
100
175
mΩ
65
110
65
115
1.35
1.50
1.65
MHz
95%
0
29.7
37.9
56.0
59.5
70
30
1
38.3
1
56.5
1
60
1
50
30.5
39.6
56.9
60.4
73
%V_DRV
%V_DRV
%V_DRV
%V_DRV
%V_DRV
ms
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