TS3USB3200_16 Datasheet, PDF (4/23 Pages) Texas Instruments – USB 2.0 Applications

TS3USB3200
SCDS333B – JUNE 2012 – REVISED JULY 2016
6 Specifications
www.ti.com
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)⁽¹⁾⁽²⁾
V_CC ,V_BUS
V_I/O
I_K
V_I
I_IK
I_CC
I_GND
T_stg
Supply voltage⁽³⁾
Input/Output DC voltage⁽³⁾
Input/Output port diode current
V_I/O < 0
Digital input voltage range (SEL1, SEL2, PSEL)
Digital logic input clamp current⁽³⁾ V_I < 0
Continuous current through V_CC
Continuous current through GND
Storage temperature
MIN
–0.3
–0.5
–50
–0.3
–50
–100
–65
MAX
5.5
5.5
5.5
100
150
UNIT
V
V
mA
V
mA
mA
mA
°C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum.
(3) All voltages are with respect to ground, unless otherwise specified.
6.2 ESD Ratings
V_(ESD)
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾
Electrostatic discharge _{Charged-device model (CDM), per JEDEC specification JESD22-C101(2)}
VALUE
±3500
±1000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
UNIT
V
6.3 Recommended Operating Conditions
V_CC
V_BUS
V_{I/O (USB)}
V_{I/O (ID)}
V_{I/O (MHL)}
V_I
T_{RAMP (VCC)}
T_{RAMP (VBUS)}
T_A
Supply voltage
V_BUS Supply voltage
Analog voltage for USB and ID signal path
Analog voltage for MHL signal path
Digital input voltage (SEL1, SEL2, PSEL)
Power supply ramp time requirement (V_CC)
Power supply ramp time requirement (V_BUS)
Operating free-air temperature
MIN MAX UNIT
2.7
4.3 V
4.3
5.5 V
0
3.6 V
1.6
3.4 V
0
V_CC
V
100 1000 μs/V
100 1000 μs/V
–40
85 ºC
6.4 Thermal Information
THERMAL METRIC⁽¹⁾
TS3USB3200
RSV (UQFN)
UNIT
R_θJA
R_θJC(top)
R_θJB
ψ_JT
ψ_JB
Junction-to-ambient thermal resistance⁽²⁾
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
Junction-to-top characterization parameter
Junction-to-board characterization parameter
16 PINS
109.1
36
46.4
1
49.7
°C/W
°C/W
°C/W
°C/W
°C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
(2) The package thermal impedance is calculated in accordance with JESD 51-7.
4
Submit Documentation Feedback
Copyright © 2012–2016, Texas Instruments Incorporated
Product Folder Links: TS3USB3200