THS6204 Datasheet, PDF (4/43 Pages) Texas Instruments – Dual-Port, Differential VDSL2 Line Driver Amplifiers

THS6204
SBOS416C – OCTOBER 2007 – REVISED APRIL 2009 ................................................................................................................................................... www.ti.com
ELECTRICAL CHARACTERISTICS: V_S = ±12V
At T_A = +25°C, R_F = 1.24kΩ, R_L = 100Ω differential, G_Diff = 10V/V differential, G_CM = 1V/V common-mode, and full bias, unless
otherwise noted. Each port is independently tested.
PARAMETER
AC PERFORMANCE
Small-signal bandwidth,
–3dB (V_O = 2V_PP)
0.1dB bandwidth flatness
Large-signal bandwidth
Slew rate (10% to 90% level)
Rise and fall time
Harmonic distortion
2nd harmonic
3rd harmonic
2nd harmonic
3rd harmonic
Multi-tone power ratio (MTPR)
G ≈ 11, active termination, SF ≈ 4.
Differential input voltage noise
Differential inverting current noise
Differential noninverting current noise
DC PERFORMANCE
Open-loop transimpedance gain
Input offset voltage
Input offset voltage drift
Input offset voltage matching
Noninverting input bias current
Noninverting input bias current drift
Inverting input bias current
Inverting input bias current drift
Inverting input bias current matching
INPUT CHARACTERISTICS
Common-mode input range
Common-mode rejection ratio
Noninverting input resistance
Inverting input resistance
CONDITIONS
TYP
+25°C
THS6204IRHF, IPWP
OVER TEMPERATURE
0°C to –40°C to
+25°C⁽²⁾ +70°C⁽³⁾ +85°C⁽³⁾
UNITS
MIN/
TEST
MAX LEVEL⁽¹⁾
G_DIFF = 5V/V differential, R_F = 1.5kΩ,
V_O = 2V_PP
160
MHz
Typ
C
G_DIFF = 10V/V differential,
R_F = 1.24kΩ, V_O = 2V_PP
150
120
110
100
MHz
Min
B
G_DIFF = 10V/V differential,
R_F = 1.24kΩ
114
MHz
Typ
C
G_DIFF = 10V/V differential,
V_O = 20V_PP
120
MHz
Typ
C
G_DIFF = 10V/V, V_O = 20V step,
differential
3800 3200
3100
3000
V/µs
Min
B
G_DIFF = +5V/V, V_O = 2V_PP, differential
5
ns
Typ
C
Full bias
–100
–95
–92
–90
dBc
Min
B
G_DIFF = 10V/V,
Low bias
–96
dBc
Typ
C
V_O = 2V_PP,
f = 1MHz, R_L = 100Ω
Full bias
–89
–85
–82
–80
dBc
Min
B
Low bias
–85
dBc
Typ
C
Full bias
–75
–70
–68
–65
dBc
Min
B
G_DIFF = 10V/V,
V_O = 2V_PP,
Low bias
–72
dBc
Typ
C
f = 10MHz,
Full bias
–73
–65
–61
–53
dBc
Min
B
R_L = 100Ω
Low bias
–58
dBc
Typ
C
VDSL2 8b profile +20.5dBm
–70
dBc
Typ
C
VDSL2 17a profile +14.5dBm;
power supply = ±7.5V
–65
dBc
Typ
C
f = 1MHz
2.5
3.0
3.2
3.3
nV/√Hz Max
B
f = 1MHz
17
20
22
24
pA/√Hz Max
B
f = 1MHz
1.2
1.4
1.5
1.6
pA/√Hz Max
B
R_L = 100Ω
700
330
320
300
kΩ
Typ
A
±15
±50
±55
±60
mV
Max
A
±110
±155 µV/°C Max
B
Channels 1 to 2 and 3 to 4 only
±0.5
±5
±6
±7
mV
Max
A
±1
±3
±4
±5
µA
Max
A
±25
±30
nA/°C Max
B
±8
±40
±45
±50
µA
Max
A
±115
±135 nA/°C Max
B
±8
±25
±30
±35
µA
Max
A
Each amplifier
Each amplifier
±9.5
±9
±8.8
±8.6
V
Min
A
65
53
50
49
dB
Min
A
500 || 2
kΩ || pF Typ
C
50
Ω
Typ
C
(1) Test levels: (A) 100% tested at +25°C. Over temperature limits set by characterization and simulation. (B) Limits set by characterization
and simulation. (C) Typical value only for information.
(2) Junction temperature = ambient for +25°C tested specifications.
(3) Junction temperature = ambient at low temperature limit; junction temperature = ambient +23°C at high temperature limit for over
temperature specifications.
4
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