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OPA2810 Datasheet, PDF (4/26 Pages) Texas Instruments – OPA2810 Dual High-Performance, Low-Power, Wide Supply Range, Rail-to-Rail Input/Output FET-Input Operational Amplifier
OPA2810
SBOS789 – AUGUST 2017
6 Specifications
www.ti.com
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)
Supply voltage (total bipolar supplies)
Internal power dissipation
Differential input voltage
Input voltage
Junction temperature, TJ
Storage temperature, Tstg
MIN
MAX
±14
See Thermal Information
VS-
VS+
VS-
VS+
150
–65
125
UNIT
V
V
V
°C
°C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6.2 ESD Ratings
V(ESD) Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
Charged-device model (CDM), per JEDEC specification JESD22-C101(2)
VALUE
±2000
±500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
UNIT
V
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
VS
Total supply voltage
4.75
TA
Ambient temperature
–40
NOM
25
MAX
27
125
UNIT
V
°C
6.4 Thermal Information
THERMAL METRIC(1)
OPA2810
DCN (SOT-23) DGK (VSSOP)
UNIT
8 PINS
8 PINS
RθJA
RθJC(top)
RθJB
ψJT
ψJB
RθJC(bot)
Junction-to-ambient thermal resistance
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
Junction-to-top characterization parameter
Junction-to-board characterization parameter
Junction-to-case (bottom) thermal resistance
123.3
81.3
40.6
25.1
40.7
—
171
°C/W
58.5
°C/W
92.6
°C/W
7.4
°C/W
91.1
°C/W
—
°C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
4
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