DS91M125_13 Datasheet, PDF (4/17 Pages) Texas Instruments – 125 MHz 1:4 M-LVDS Repeater with LVDS Input

DS91M125
SNLS290C – AUGUST 2008 – REVISED APRIL 2013
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ABSOLUTE MAXIMUM RATINGS⁽¹⁾⁽²⁾
Supply Voltage
LVCMOS Input Voltages
M-LVDS Output Voltages
LVDS Input Voltages
Maximum Package Power Dissipation at +25°C
Thermal Resistance (4-Layer, 2 oz. Cu, JEDEC)
Maximum Junction Temperature
Storage Temperature Range
Lead Temperature (Soldering, 4 seconds)
ESD Susceptibility
SOIC Package
Derate SOIC Package
θ_JA
θ_JC
HBM ⁽³⁾
MM ⁽⁴⁾
CDM ⁽⁵⁾
−0.3V to +4V
−0.3V to (V_DD + 0.3V)
−1.9V to +5.5V
−0.3V to (V_DD + 0.3V)
2.21W
19.2 mW/°C above +25°C
52°C/W
19°C/W
140°C
−65°C to +150°C
260°C
≥ 8 kV
≥ 250V
≥ 1250V
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur, including inoperability and degradation of
device reliability and/or performance. Functional operation of the device and/or non-degradation at the Absolute Maximum Ratings or
other conditions beyond those indicated in the Recommended Operating Conditions is not implied. The Recommended Operating
Conditions indicate conditions at which the device is functional and the device should not be operated beyond such conditions.
(2) If Military/Aerospace specified devices are required, please contact the TI Sales Office/ Distributors for availability and specifications.
(3) Human Body Model, applicable std. JESD22-A114C
(4) Machine Model, applicable std. JESD22-A115-A
(5) Field Induced Charge Device Model, applicable std. JESD22-C101-C
RECOMMENDED OPERATING CONDITIONS
Supply Voltage, V_DD
Voltage at M-LVDS Outputs
Voltage at LVDS Inputs
LVCMOS Input Voltage High V_IH
LVCMOS Input Voltage Low V_IL
Operating Free Air Temperature T_A
Min
Typ
Max
Units
3.0
3.3
3.6
V
−1.4
+3.8
V
0
V_DD
V
2.0
V_DD
V
0
0.8
V
−40
+25
+85
°C
4
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